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| APT100DL60HJ ISOTOP(R)Fast Diode Full Bridge Power Module VRRM = 600V IF = 100A @ Tc = 80C Application * * * * Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features * * * * * * * * Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration ISOTOP(R) Package (SOT-227) + ~ - Benefits * * * * * * Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant ~ Absolute maximum ratings Symbol VR VRRM IF(AV) IFRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% 8.3ms TC = 80C TJ = 45C Max ratings 600 100 A 200 Unit V November, 2009 1-3 APT100DL60HJ - Rev 0 Maximum repetitive forward current limited by TJmax These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APT100DL60HJ All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM Diode Forward Voltage Maximum Reverse Leakage Current Test Conditions IF = 100A VR = 600V Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min Typ 1.6 1.5 Max 2 250 500 Unit V A Dynamic Characteristics Symbol Characteristic trr Qrr Err Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 100A VR = 300V di/dt = 2000A/s Test Conditions Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min Typ 125 180 4.7 9.9 1.1 2.4 Max Unit ns C mJ Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min Typ Max 0.77 20 175 300 1.5 Unit C/W V C N.m g Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 29.2 SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 0.75 (.030) 0.85 (.033) 25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 1.95 (.077) 2.14 (.084) Dimensions in Millimeters and (Inches) www.microsemi.com 2-3 APT100DL60HJ - Rev 0 November, 2009 APT100DL60HJ Typical Performance Curve Forward Characteristic of diode 200 175 150 Err (mJ) 125 IF (A) 100 75 50 25 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 TJ=150C Energy losses vs Collector Current 4 VCE = 300V VGE=-15V TJ = 150C 3 2 1 TJ=25C 0 0 25 50 75 100 125 150 175 200 IF (A) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 Thermal Impedance (C/W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.9 0.7 0.05 0 0.00001 Rectangular Pulse Duration in Seconds ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 APT100DL60HJ - Rev 0 November, 2009 |
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